2SK1957 silicon n-channel mos fet ade-208-1336 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator, dc - dc converter,motor control outline 1 2 3 to-220fm 1. gate 2. drain 3. source d g s
2SK1957 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 200 v gate to source voltage v gss 20 v drain current i d 7a drain peak current i d(pulse) * 1 28 a body to drain diode reverse drain current i dr 7a channel dissipation pch* 2 30 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2SK1957 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 200 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds =160 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.33 0.45 w i d = 4 a v gs = 10 v* 1 forward transfer admittance |y fs | 3.0 4.5 s i d = 4 a v ds = 10 v* 1 input capacitance ciss 700 pf v ds = 10 v output capacitance coss 260 pf v gs = 0 reverse transfer capacitance crss 45 pf f = 1 mhz turn-on delay time t d(on) 20 ns i d = 4 a rise time t r 45 ns v gs = 10 v turn-off delay time t d(off) 50 ns r l = 7.5 w fall time t f ?5?s body to drain diode forward voltage v df 1.1 v i f = 7 a, v gs = 0 body to drain diode reverse recovery time t rr 150 ns i f = 7 a, v gs = 0, di f / dt = 100 a / m s note 1. pulse test
2SK1957 4 power vs. temperature derating 60 40 20 0 50 100 150 case temperature tc (?) channel dissipation pch (w) maximum safe operation area drain to source voltage v (v) 1 3 10 100 ds 50 drain current i (a) d 30 30 300 1000 10 3 1 0.3 0.1 0.05 operation in this area is limited by r (on) ds 10 s 100 s 1 ms dc operation (tc = 25?) ta = 25 ? m m pw = 10 ms (1 shot) typical output characteristics drain to source voltage v (v) ds 048121620 2 4 6 8 10 drain current i (a) d 4 v 6 v 4.5 v v = 3.5 v gs 10 v pulse test 5.5 v 5 v typical transfer characteristics 24 6810 gate to source voltage v (v) gs 2 4 6 8 10 drain current i (a) d pulse test v = 10 v ds 0 tc = 25? ?5? 75?
2SK1957 5 drain to source saturation voltage vs. gate to source voltage 4 8 12 16 20 0 gate to source voltage v (v) gs drain to source saturation voltage v (on) (v) ds 0.4 0.8 1.2 1.6 2.0 i = 1a d 2 a 5 a pulse test static drain to source on state resistance vs. drain current 0.5 drain current i (a) d 10 static drain to source on state resistance r (on) ( ) ds w 5 2 1 0.2 0.5 0.1 12 51020 50 pulse test v = 10 v gs 15 v static drain to source on state resistance vs. temperature ?0 0 40 80 120 case temperature t (?) 0 0.2 0.4 0.6 0.8 1.0 static drain to source on state resistance r (on) ( ) ds w c 160 pulse test i = 5 a d 1 a, 2 a forward transfer admittance vs. drain current 0.1 0.5 2 drain current i (a) d 50 forward transfer admittance |yfs| (s) 20 10 5 2 0.5 0.2 1 10 v = 10 v pulse test ds 75? tc = 25? 1 ?5? 5
2SK1957 6 body to drain diode reverse recovery time 0.2 1 5 20 5 100 500 reverse drain current i (a) dr reverse recovery time t (ns) rr 200 50 20 10 0.5 2 10 di/dt = 100 a/ s, v = 0 ta = 25 c m gs typical capacitance vs. drain to source voltage 100 10 1 0 drain to source voltage v (v) ds capacitance c (pf) 1000 10 20 30 40 50 ciss coss crss v = 0 f = 1 mhz gs dynamic input characteristics 816243240 gate charge qg (nc) 100 200 400 500 drain to source voltage v (v) ds 4 8 12 16 20 gate to source voltage v (v) gs 0 0 300 i = 7 a d v = 150 v 100 v 50 v dd dd v gs v ds v = 150 v 100 v 50 v switching characteristics 0.1 500 drain current i (a) d switching time t (ns) 200 100 50 20 10 5 0.2 1 2 10 t (off) t (on) t v = 10 v, v 30 v pw = 2 s, duty 1% gs m dd t < = = : d f d r 5 0.5
2SK1957 7 reverse drain current vs. source to drain voltage source to drain voltage v (v) sd reverse drain current i (a) dr 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 v = 10 v 0, ? v pulse test gs 3 normalized transient thermal impedance g s (t) 1.0 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m normalized transient thermal impedance vs. pulse width pulse width pw ( s ) d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse t pw p dm d = t pw q ch? (t) = g s (t) ? q ch? q ch? = 4.17 c/w, t c = 25 c t c = 25 c switching time test circuit vin monitor vin 10 v 50 w d.u.t. vout monitor r l v dd 30 v = . . waveforms vin t d (on) 10% t r 90% vout 10% 90% 90% t f t d (off) 10%
2SK1957 8 package dimensions 10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 f hitachi code jedec eiaj mass (reference value) to-220fm conforms 1.8 g as of january, 2001 unit: mm
2SK1957 9 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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